Title :
Study on electrical properties of Zinc Oxide thin film
Author :
Halim, A. A Abd ; Hashim, H. ; Rusop, M. ; Mamat, M.H. ; Zoolfakar, A.S.
Author_Institution :
Electr. Eng. Dept., Univ. Teknol. Mara, Shah Alam
Abstract :
This project focuses on the effect of annealing temperature to electrical properties of deposited Zinc Oxide (ZnO) thin film. ZnO solutions made from Zinc acetate dehydrate (ZnAC), 2-Methoxyethanol and monoethanolmine (MEA) are deposited onto glass substrates using spin coating technique. Deposited films are annealed at various temperatures from 350degC to 500degC in the furnace (Preterm Furnace) for 1 hour. The effect of annealing temperature on the electrical properties is investigated. The electrical properties are characterized using Current-Voltage (I-V) measurement unit (Advantest R6243). I-V characterization shows the films exhibited ohmic contact and the resistivity decreased when annealing temperature increased. This indicates that the electrical properties of the films improved with higher annealing temperature up to 500degC.
Keywords :
II-VI semiconductors; annealing; electrical resistivity; ohmic contacts; semiconductor thin films; spin coating; zinc compounds; 2-methoxyethanol; ZnO; annealing; current-voltage measurement unit; electrical resistivity; glass substrates; monoethanolmine; ohmic contact; spin coating; temperature 350 degC to 500 degC; zinc acetate dehydrate; zinc oxide thin film; Annealing; Coatings; Furnaces; Glass; Measurement units; Sputtering; Substrates; Temperature; Transistors; Zinc oxide;
Conference_Titel :
Innovative Technologies in Intelligent Systems and Industrial Applications, 2008. CITISIA 2008. IEEE Conference on
Conference_Location :
Cyberjaya
Print_ISBN :
978-1-4244-2416-0
DOI :
10.1109/CITISIA.2008.4607347
