Title :
An influence of linear sizes of the polysilicon piezoresistor on its sensitivity [in pressure sensors]
Author :
Grishenko, V.V. ; Lubimsky, V.M. ; Kharkov, A.A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The influence of linear sizes of the polysilicon piezoresistor on the sensitivity is investigated. The decrease of the transverse sensitivity under the conditions of decreasing the width of the piezoresistor is found and explained by noncomplete transmission of strain from the bottom to the piezoresistor. The numerical value of the characteristic parameter λ for describing the field of strains in the piezoresistor is defined experimentally. As shown in this paper, this parameter equals 1.5 μm
Keywords :
elemental semiconductors; piezoresistive devices; pressure sensors; resistors; silicon; 1.5 micron; Si; linear sizes; noncomplete transmission; polysilicon piezoresistor; pressure sensors; transverse sensitivity; Capacitive sensors; Circuits; Dielectrics and electrical insulation; Mechanical sensors; Piezoresistance; Piezoresistive devices; Protection; Stress; Temperature distribution; Temperature sensors;
Conference_Titel :
Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0291-1
DOI :
10.1109/SREDM.2000.888617
