DocumentCode
2689594
Title
An influence of linear sizes of the polysilicon piezoresistor on its sensitivity [in pressure sensors]
Author
Grishenko, V.V. ; Lubimsky, V.M. ; Kharkov, A.A.
Author_Institution
Novosibirsk State Tech. Univ., Russia
fYear
2000
fDate
2000
Firstpage
141
Lastpage
148
Abstract
The influence of linear sizes of the polysilicon piezoresistor on the sensitivity is investigated. The decrease of the transverse sensitivity under the conditions of decreasing the width of the piezoresistor is found and explained by noncomplete transmission of strain from the bottom to the piezoresistor. The numerical value of the characteristic parameter λ for describing the field of strains in the piezoresistor is defined experimentally. As shown in this paper, this parameter equals 1.5 μm
Keywords
elemental semiconductors; piezoresistive devices; pressure sensors; resistors; silicon; 1.5 micron; Si; linear sizes; noncomplete transmission; polysilicon piezoresistor; pressure sensors; transverse sensitivity; Capacitive sensors; Circuits; Dielectrics and electrical insulation; Mechanical sensors; Piezoresistance; Piezoresistive devices; Protection; Stress; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on
Conference_Location
Novosibirsk
Print_ISBN
5-7782-0291-1
Type
conf
DOI
10.1109/SREDM.2000.888617
Filename
888617
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