Title :
Band3 Duplexer using ZERO TCF Love wave device
Author :
Miura, Masaki ; Nishizawa, T. ; Takahashi, Tatsuro ; Kawachi, O. ; Matsuda, Shodai ; Matsuda, Tadamitsu ; Ueda, Makoto ; Satoh, Y.
Author_Institution :
Taiyo Yuden Mobile Technol. Co., Ltd., Kanagawa, Japan
Abstract :
In this paper, a novel Love wave device which has Al2O3 under layer structure is proposed. Al2O3 under layer structure enables us to adjust the electromechanical coupling factor k2 of Love wave. As a result, a suitable k2 for Band3 Duplexer of about 10% was realized using 0°YX-LiNbO3 substrate, Cu electrodes and thick SiO2 film. In addition, the temperature coefficient of frequency (TCF) was improved especially at resonant frequency of 1-port resonator with Al2O3 under layer structure. Using this novel Love wave device with Al2O3 under layer structure a Band3 Duplexer was realized with excellent temperature characteristics. The TCF of the higher frequency side of pass band in Tx filter was -3.6 ppm/°C, that of the lower frequency side of pass band in Rx filter was -7.3 ppm/°C.
Keywords :
Love waves; alumina; band-pass filters; electrodes; lithium compounds; multiplexing equipment; resonators; silicon compounds; surface acoustic wave filters; 1-port resonator; Al2O3; LiNbO3; Rx filter; SiO2; ZERO TCF love wave device; alumina under layer structure; band3 duplexer; copper electrodes; electromechanical coupling factor; frequency side; pass band; resonant frequency; temperature characteristics; temperature coefficient of frequency; Aluminum oxide; Films; Resonant frequency; Resonator filters; Substrates; Surface acoustic wave devices; Temperature; Al2O3; Love wave; SAW; SiO2; under layer;
Conference_Titel :
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4673-4561-3
DOI :
10.1109/ULTSYM.2012.0315
