DocumentCode
2689971
Title
Full Characterization of GaAs Power MESFET and Accurate Load-Pull Contours Prediction
Author
Lajugie, M. ; Grossier, F. ; Silbermann, A. ; Bender, Y.
fYear
1986
fDate
2-4 June 1986
Firstpage
339
Lastpage
342
Abstract
A novel large-signal model implemented on the nonlinear time-domain program CIRCEC leads to accurate prediction of all the GaAs MESFET characteristics, needed for the design of a power amplifier. The good agreement between measured and modeled load-pull contours validates the chosen trends.
Keywords
Electric breakdown; Frequency measurement; Gain measurement; Gallium arsenide; Impedance measurement; MESFETs; Power amplifiers; Power measurement; Predictive models; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1986.1132186
Filename
1132186
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