Title :
Model-Extrapolated S-Parameter Design of MM-Wave GaAs FET Amplifiers
Author :
Dearden, L. ; Miner, G. ; Sayed, M.
Abstract :
Broadband millimeter-wave GaAs MESFET amplifiers have been designed from model-extrapolated S-parameters. An equivalent circuit MESFET model valid to 40 GHz is given. Amplifier performance from 15-50 GHz is shown and compared with the equivalent circuit model.
Keywords :
Bonding; Equivalent circuits; FETs; Frequency; Gain; Gallium arsenide; MESFETs; Millimeter wave measurements; Millimeter wave technology; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132199
