DocumentCode :
2690189
Title :
Large-Signal Narrow Band Quasi-Black-Box Modelling of Microwave Transistors
Author :
Filicori, F. ; Mambrioni, A. ; Monaco, V.A.
fYear :
1986
fDate :
2-4 June 1986
Firstpage :
393
Lastpage :
396
Abstract :
A method is proposed for the large-signal narrow-band characterization of microwave active devices. It does not require a detailed knowledge of the device internal structure, but only some measurements of small signal S parameters effected under different bias conditions and some other simple large-signal measurements to be effected by a standard network analyzer.
Keywords :
Delay; Equations; Frequency measurement; Mathematical model; Microwave devices; Microwave measurements; Microwave transistors; Narrowband; Packaging; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1986.1132201
Filename :
1132201
Link To Document :
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