DocumentCode
269028
Title
The Influence of High Temperatures on Radiation Damage of GaInP 
/GaAs/Ge Triple Junction Cells
Author
Brandt, Christian ; Baur, Carsten ; Caon, A. ; Müller-Buschbaum, Peter ; Zimmermann, Christian ; Andreev, T.
Author_Institution
Phys. Dept., Tech. Univ. Munchen, Garching, Germany
Volume
3
Issue
2
fYear
2013
fDate
Apr-13
Firstpage
904
Lastpage
908
Abstract
We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in situ measured open-circuit voltages. The time-dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration that, in turn, suggests the annealing of more than one defect having different activation energies.
Keywords
III-V semiconductors; annealing; defect states; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; high-temperature effects; indium compounds; semiconductor junctions; solar cells; GaInP2-GaAs-Ge; activation energies; annealing temperature; annealing time; defect concentration; electron irradiated component cells; electron volt energy 1 MeV; high temperature effects; in situ measured open-circuit voltages; isothermal annealing; partly overlapping exponential decays; radiation damage; time-dependent behavior; triple-junction solar cell; Annealing; Gallium arsenide; Junctions; Photovoltaic cells; Photovoltaic systems; Radiation effects; Temperature measurement; Particle irradiation; solar cells; space missions;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2013.2242958
Filename
6472005
Link To Document