Title :
Highly Stable 35 GHz GaAs FET Oscillator
Author :
Dow, G.S. ; Sensiper, D. ; Schellenberg, J.M.
Abstract :
A 35 GHz FET oscillator stabilized with a dielectric resonator has achieved a single sideband noise-to-carrier ratio of -87 dBc/Hz at fm = 25 kHz, external Q /spl cong/ 3000, and frequency stability of 1 ppm/°C. Using this oscillator as the LO, a compact MIC Ka-band receiver was also developed.
Keywords :
Coupling circuits; Dielectric substrates; Gallium arsenide; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Millimeter wave circuits; Millimeter wave technology; Power generation; Signal to noise ratio;
Conference_Titel :
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
DOI :
10.1109/MWSYM.1986.1132254
