• DocumentCode
    2690913
  • Title

    Design impacts on NAND Flash memory core circuits with vertical MOSFETs

  • Author

    Sakui, Koji ; Endoh, Tetsuo

  • Author_Institution
    Center for Interdiscipl. Res., Tohoku Univ., Sendai, Japan
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    By utilizing the vertical MOSFETs advantages, the compact, efficient, and low-power peripheral core circuit design for the NAND Flash memory has been proposed.
  • Keywords
    MOSFET; NAND circuits; flash memories; integrated circuit design; low-power electronics; NAND flash memory core circuit; low-power peripheral core circuit design; vertical MOSFET; Capacitance; Charge pumps; Circuit synthesis; Decoding; Driver circuits; MOS capacitors; MOSFETs; Manufacturing; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2010 IEEE International
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-6719-8
  • Electronic_ISBN
    978-1-4244-7668-8
  • Type

    conf

  • DOI
    10.1109/IMW.2010.5488310
  • Filename
    5488310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2690913