Title :
Design impacts on NAND Flash memory core circuits with vertical MOSFETs
Author :
Sakui, Koji ; Endoh, Tetsuo
Author_Institution :
Center for Interdiscipl. Res., Tohoku Univ., Sendai, Japan
Abstract :
By utilizing the vertical MOSFETs advantages, the compact, efficient, and low-power peripheral core circuit design for the NAND Flash memory has been proposed.
Keywords :
MOSFET; NAND circuits; flash memories; integrated circuit design; low-power electronics; NAND flash memory core circuit; low-power peripheral core circuit design; vertical MOSFET; Capacitance; Charge pumps; Circuit synthesis; Decoding; Driver circuits; MOS capacitors; MOSFETs; Manufacturing; Silicon; Voltage;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488310
