DocumentCode :
2690946
Title :
High performance Flash memory for 65 nm embedded automotive application
Author :
Piazza, Fausto ; Boccaccio, Christian ; Bruyere, Sylvie ; Cea, Riccardo ; Clark, Bill ; Degors, Nicolas ; Collins, Christopher ; Gandolfo, Anna ; Gilardini, Annalisa ; Gomiero, Enrico ; Mans, Pier Marie ; Mastracchio, Gianfranco ; Pacelli, David ; Planes,
Author_Institution :
STMicroelectronics, Crolles, France
fYear :
2010
fDate :
16-19 May 2010
Firstpage :
1
Lastpage :
3
Abstract :
In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65 nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the flash cell and the related HV MOS and the results obtained on a 4 Mbit flash array are very promising.
Keywords :
CMOS memory circuits; automotive electronics; flash memories; CMOS technology; HV MOS; embedded automotive application; embedded technology; flash array; high performance flash memory; size 65 nm; storage capacity 4 Mbit; Automotive applications; CMOS process; CMOS technology; Dielectric substrates; Electronics industry; Flash memory; Implants; Nonvolatile memory; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
Type :
conf
DOI :
10.1109/IMW.2010.5488312
Filename :
5488312
Link To Document :
بازگشت