DocumentCode :
2691012
Title :
Comparative study of non-polar switching behaviors of NiO- and HfO2-based Oxide Resistive-RAMs
Author :
Jousseaume, V. ; Fantini, A. ; Nodin, J.F. ; Guedj, C. ; Persico, A. ; Buckley, J. ; Tirano, S. ; Lorenzi, P. ; Vignon, R. ; Feldis, H. ; Minoret, S. ; Grampeix, H. ; Roule, A. ; Favier, S. ; Martinez, E. ; Calka, P. ; Rochat, N. ; Auvert, G. ; Barnes, J.
Author_Institution :
CEA-LETI-MINATEC, Grenoble, France
fYear :
2010
fDate :
16-19 May 2010
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO2 and NiO devices. Then, by using a specific test setup, we present a systematic comparative study of HfO2 and NiO devices, clearly showing the tunability of the electrical characteristics with material type and process. HfO2 devices lead to largest High Resistance State/Low Resistance State ratios and higher forming voltages compared to NiO cells, while reset voltages are similar. Data retention of both materials show highly stable Low Resistance State state, while High Resistance State increases over time under 85°C baking.
Keywords :
hafnium compounds; nickel compounds; platinum; random-access storage; HfO2; NiO; Pt; composition analyses; high resistance state-low resistance state ratios; identical integration schemes; material screening; nonpolar switching behaviors; oxide resistive random access memory; oxide resistive-RAM; structural analyses; temperature 85 degC; Composite materials; Electric resistance; Electric variables; Electrodes; Hafnium oxide; Materials testing; Performance analysis; Qualifications; System testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
Type :
conf
DOI :
10.1109/IMW.2010.5488316
Filename :
5488316
Link To Document :
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