Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells

NiO-based resistive-switching memory (RRAM) is attracting a growing research interest for high-density non-volatile storage applications. One of the most difficult challenges for RRAM-based high-density memories is the high current necessary for the reset operation (I_reset), which limits the possibilities of scaling for the select diode in the cross-bar memory array. This work addresses the scalability of the reset current I_reset in NiO-based RRAM by limiting the set current through an integrated series MOSFET. I_reset is shown to be controllable down to below 10 μA. The consequences of these findings for the select diode in the cross-bar array structure are finally discussed.