Title :
A CuxO-based resistive memory with low power and high reliability for SOC nonvolatile memory applications
Author :
Wang, M. ; Song, Y.L. ; Wan, H.J. ; Lv, H.B. ; Zhou, P. ; Tang, T.A. ; Lin, Y.Y. ; Huang, R. ; Song, S. ; Wu, J.G. ; Wu, H.M. ; Chi, M.H.
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
Abstract :
A CuxO-based resistive memory is successfully integrated in 0.13 μm logic process. Operation algorithm is optimized to achieve low power consumption with reset current down to 30 μA. High thermal stability and small cell size less than 22 F2 have been demonstrated. The advantages make this device promising for system on chip non-volatile memory applications.
Keywords :
CMOS logic circuits; CMOS memory circuits; copper compounds; integrated circuit reliability; random-access storage; system-on-chip; thermal stability; CMOS logic process; CuxO; SOC nonvolatile memory reliability; high thermal stability; low power consumption; resistive memory; size 0.13 mum; system on chip nonvolatile memory; CMOS logic circuits; Circuit testing; Electrodes; Energy consumption; Logic devices; Logic testing; Nonvolatile memory; Tellurium; Thermal stability; Voltage;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488318
