Title :
CoOx-RRAM memory cell technology using recess structure for 128Kbits memory array
Author :
Kawabata, Suguru ; Nakura, Mitsuru ; Yamazaki, Shinobu ; Shibuya, Takahiro ; Inoue, Yushi ; Onishi, Junya ; Tabuchi, Yoshiaki ; Tamai, Yukio ; Yaoi, Yoshifumi ; Ishihara, Kazuya ; Ohta, Yoshiji ; Shima, Hisashi ; Akinaga, Hiro ; Fukuda, Natsuki ; Kurihara
Author_Institution :
Corp. R&D Group, Sharp Corp., Fukuyama, Japan
Abstract :
This paper presents the process integration and device technology for the Resistance RAM(RRAM) memory array using a CoOx film and a recess structure as a resistor, which is capable of low voltage, high speed and low current operation. The resistance of the CoOx film and its uniformity are strongly dependent on the film quality, which is optimized by controlling the O2 gas flow rate during the film deposition. We demonstrate the basic write and read operation of the 128Kbits memory array by developing the novel process integration technology and optimizing the test algorism.
Keywords :
memory architecture; random-access storage; CoOx; O2; RRAM memory cell technology; device technology; film deposition; film quality; gas flow rate; process integration technology; random access memory; recess structure; resistance RAM memory array; resistor; word length 128000 bit; Mercury (metals);
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488319
