CoOx-RRAM memory cell technology using recess structure for 128Kbits memory array

Author

Kawabata, Suguru ; Nakura, Mitsuru ; Yamazaki, Shinobu ; Shibuya, Takahiro ; Inoue, Yushi ; Onishi, Junya ; Tabuchi, Yoshiaki ; Tamai, Yukio ; Yaoi, Yoshifumi ; Ishihara, Kazuya ; Ohta, Yoshiji ; Shima, Hisashi ; Akinaga, Hiro ; Fukuda, Natsuki ; Kurihara

Author_Institution

Corp. R&D Group, Sharp Corp., Fukuyama, Japan

fYear

2010

fDate

16-19 May 2010

Firstpage

1

Lastpage

2

Abstract

This paper presents the process integration and device technology for the Resistance RAM(RRAM) memory array using a CoOx film and a recess structure as a resistor, which is capable of low voltage, high speed and low current operation. The resistance of the CoOx film and its uniformity are strongly dependent on the film quality, which is optimized by controlling the O₂ gas flow rate during the film deposition. We demonstrate the basic write and read operation of the 128Kbits memory array by developing the novel process integration technology and optimizing the test algorism.

Keywords

memory architecture; random-access storage; CoO_x; O₂; RRAM memory cell technology; device technology; film deposition; film quality; gas flow rate; process integration technology; random access memory; recess structure; resistance RAM memory array; resistor; word length 128000 bit; Mercury (metals);

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2010 IEEE International

Conference_Location

Seoul

Print_ISBN

978-1-4244-6719-8

Electronic_ISBN

978-1-4244-7668-8

Type

conf

DOI

10.1109/IMW.2010.5488319

Filename

5488319