A phenomenological model of oxygen ion transport for metal oxide resistive switching memory

Author

Yu, Shimeng ; Wong, H. -S Philip

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2010

fDate

16-19 May 2010

Firstpage

1

Lastpage

4

Abstract

Reproducible resistance switching phenomenon in metal oxides is attributed to the non-linear oxygen ions transport. Here we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanism. Numerical simulation results reveal the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. Also, the voltage-time dilemma between fast switching and long retention is explained by the non-linearity of the ionic transport under high electric field. Experimental data are employed for model verification.

Keywords

numerical analysis; random-access storage; bipolar resistive switching mechanism; metal oxide resistive switching memory; numerical simulation; oxygen ion transport; phenomenological model; reproducible resistance switching; unipolar resistive switching mechanism; Anodes; CMOS technology; Electric resistance; Electrodes; Numerical simulation; Oxygen; Potential well; Random access memory; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2010 IEEE International

Conference_Location

Seoul

Print_ISBN

978-1-4244-6719-8

Electronic_ISBN

978-1-4244-7668-8

Type

conf

DOI

10.1109/IMW.2010.5488321

Filename

5488321