Title :
A phenomenological model of oxygen ion transport for metal oxide resistive switching memory
Author :
Yu, Shimeng ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Reproducible resistance switching phenomenon in metal oxides is attributed to the non-linear oxygen ions transport. Here we present a phenomenological model to provide a unified explanation for both the unipolar and bipolar resistive switching mechanism. Numerical simulation results reveal the switching mode is determined by the electrode/oxide interface property. Without/with an interfacial barrier, unipolar/bipolar switching behavior is obtained. Also, the voltage-time dilemma between fast switching and long retention is explained by the non-linearity of the ionic transport under high electric field. Experimental data are employed for model verification.
Keywords :
numerical analysis; random-access storage; bipolar resistive switching mechanism; metal oxide resistive switching memory; numerical simulation; oxygen ion transport; phenomenological model; reproducible resistance switching; unipolar resistive switching mechanism; Anodes; CMOS technology; Electric resistance; Electrodes; Numerical simulation; Oxygen; Potential well; Random access memory; Semiconductor device modeling; Voltage;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488321
