• DocumentCode
    2691136
  • Title

    Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond

  • Author

    Takemura, R. ; Kawahara, T. ; Ono, K. ; Miura, K. ; Matsuoka, H. ; Ohno, H.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose a disruptive reading and restoring schemes for high-density SPRAM. The proposed scheme uses the feature that, with a desired error rate, TMR device doesn´t switch its magnetization of free layer in a specific period of large current pulse. The restoring operation is performed to ensure the storing data. As a result, keeping the good scalability of spin-transfer torque writing toward Gb-scale and beyond, high speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation.
  • Keywords
    DRAM chips; SRAM chips; integrated circuit reliability; DDRx-SDRAM; Gb-scale SPRAM; disruptive reading scheme; high-density SPRAM restoring schemes; high-scalable disruptive reading scheme; read-disturbance-free operation; spin-transfer torque; Error analysis; Laboratories; Magnetoelectronics; Nanoelectronics; Random access memory; Read-write memory; Scalability; Signal restoration; Switches; Writing; MRAM; SPRAM; disruptive reading; restoring and TMR;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2010 IEEE International
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-6719-8
  • Electronic_ISBN
    978-1-4244-7668-8
  • Type

    conf

  • DOI
    10.1109/IMW.2010.5488324
  • Filename
    5488324