DocumentCode :
2691172
Title :
Extraction of the retention properties of a phase-change cell from temperature-ramp tests using a novel method
Author :
Goux, L. ; Hurkx, G.A.M. ; Wang, X.P. ; Delhougne, R. ; Attenborough, K. ; Gravesteijn, D. ; Wouters, D. ; Gonzalez, J. Perez
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2010
fDate :
16-19 May 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this work we propose a novel method for fast and reliable evaluation of the retention properties of phase-change memory cells, based on the modeling of the temperature-ramp characteristics. Using this method we investigate the influence of the length and thickness of the amorphous mark on the retention lifetime. The results show that the degradation of the retention properties with the cell scaling is limited.
Keywords :
phase change memories; cell scaling; phase change memory cells; retention properties; temperature ramp characteristics; Amorphous materials; Crystallization; Electrical resistance measurement; Electrodes; Equations; Isothermal processes; Phase change materials; Solid modeling; Temperature dependence; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
Type :
conf
DOI :
10.1109/IMW.2010.5488327
Filename :
5488327
Link To Document :
بازگشت