Simulations of a high power 4H-SiC VJFET and its GaAs counterpart

Author

shui, Q. ; Gu, Xingfa ; Myles, C.W. ; Mazzola, M.S. ; Gundersen, M.A.

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

1

fYear

2003

fDate

15-18 June 2003

Firstpage

123

Abstract

In this paper, the 2D simulator ATLAS is used to investigate and compare the voltage blocking capability, the current rating and the switching characteristics of VJFET´s based on SiC and GaAs materials. As a part of this study, simulations and analysis of a normally-off 4H-SiC VJFET with 8 kV blocking voltage are presented, along with similar results for its GaAs counterpart. This structure is optimized to achieve a high blocking voltage and a high current density. The goal of this work is to compare the performance of a SiC VJFET with that of a similar GaAs VJFET, and to provide guidelines for pulsed power applications.

Keywords

III-V semiconductors; current density; junction gate field effect transistors; pulsed power technology; wide band gap semiconductors; 2D simulator; 4H-SiC VJFET; 8 kV; GaAs; GaAs counterpart; SiC; VJFET switching characteristics; current density; current rating; pulsed power applications; voltage blocking capability; Computational modeling; Current density; Gallium arsenide; Photonic band gap; Power semiconductor switches; Silicon carbide; Substrates; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Pulsed Power Conference, 2003. Digest of Technical Papers. PPC-2003. 14th IEEE International

Conference_Location

Dallas, TX, USA

Print_ISBN

0-7803-7915-2

Type

conf

DOI

10.1109/PPC.2003.1277674

Filename

1277674