I-V Characteristics of the Metal-Semiconductor Junction

The electrical characteristic test of nanowires is important in nano-materials research. The metal-semiconductor junction that is fabricated with semiconductor nanowire and metal probe in electrical test system has impact on the test result directly, therefore it´s necessary to study I-V characteristics of the metal-semiconductor(M-S) junction. Si, ZnO, GaN have been selected from multiple semiconductor materials. When they connected with tungsten probe, all of them formed Schottky barriers, but the relationships between current and voltage of the junctions are distinct. In the thesis, I-V curves of these M-S junctions are compared, and the best electrical performance of M-S junction is selected.