DocumentCode
2691588
Title
High Performance Monolithic Power Amplifier Using a Unique Ion Implantation Process
Author
Wang, S.K. ; Wang, K.G. ; Chang, C.D.
fYear
1986
fDate
2-4 June 1986
Firstpage
803
Lastpage
805
Abstract
State-of-the-art X-band power FETs and monolithic amplifiers have been fabricated by a high yield planar process using a unique double-peaked implant profile. A 1-mm FET has achieved 40 percent power added efficiency with 720 mW output power and 6.3 dB gain at 10 GHz. A two-stage monolithic amplifier has delivered 2.2 W output power at 9.5 GHz for a record 0.6 W/mm power density. The monolithic amplifier chips have also achieved 20 percent dc-yield and 5 percent uniformity in I/sub DSS/ and V/sub PO/.
Keywords
Doping profiles; FETs; Fabrication; Gallium arsenide; High power amplifiers; Implants; Ion implantation; Power amplifiers; Power generation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1986.1132313
Filename
1132313
Link To Document