DocumentCode
2691713
Title
Analysis on switching behaviour of trench and planar IGBTs under soft and hard switching conditions
Author
Iwamoto, H. ; Kawakami, A. ; Kondo, H. ; Tabata, M. ; Wheeler, N.
Author_Institution
Power Semicond. Device Div., Mitsubishi Electr. Co., Japan
fYear
2000
fDate
2000
Firstpage
246
Lastpage
249
Abstract
This paper presents the results of analysis on dynamic operation of 3 kinds of IGBTs under conditions of soft and hard switching topologies. Voltage and current waveforms and power losses, electric field distributions and carriers behaviors inside the chips are studied through simulation and experiment. It is noted that the trench gate IGBT has advantages over the other types for the hard switching application and both the trench and planar gate IGBTs by epitaxial-wafer are suitable for soft switching application
Keywords
insulated gate bipolar transistors; losses; power convertors; power semiconductor switches; current waveforms; dynamic operation; electric field distributions; epitaxial-wafer; hard switching conditions; planar IGBT; power convertors; power losses; soft switching conditions; switching behaviour analysis; trench IGBT; voltage waveforms;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable Speed Drives, 2000. Eighth International Conference on (IEE Conf. Publ. No. 475)
Conference_Location
London
Print_ISBN
0-85296-729-2
Type
conf
DOI
10.1049/cp:20000253
Filename
888930
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