• DocumentCode
    2691741
  • Title

    A new 1700 V IGBT module for 690 V AC industrial inverter applications

  • Author

    Iwamoto, H. ; Tabata, M. ; Mochizuki, K. ; Thal, Eckhard ; Wheeler, N.

  • Author_Institution
    Div. of Power Device, Mitsubishi Electr. Corp., Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    256
  • Lastpage
    261
  • Abstract
    A new 1700 V IGBT is presented, with a PT structure formed by diffusing the collector and buffer layers into a homogeneous silicon wafer. This structure retains the superior Vce(sat)-switching loss trade-off of the PT IGBT, whilst achieving the greater short circuit ruggedness and easier parallel connection of NPT devices
  • Keywords
    insulated gate bipolar transistors; invertors; 1700 V; 690 V; AC industrial inverter applications; IGBT module; PT structure; Vce(sat)-switching loss trade-off; buffer layers; collector layers; homogeneous silicon wafer; parallel connection; punch through structure; short circuit ruggedness;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Variable Speed Drives, 2000. Eighth International Conference on (IEE Conf. Publ. No. 475)
  • Conference_Location
    London
  • Print_ISBN
    0-85296-729-2
  • Type

    conf

  • DOI
    10.1049/cp:20000255
  • Filename
    888932
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2691741