DocumentCode :
2691741
Title :
A new 1700 V IGBT module for 690 V AC industrial inverter applications
Author :
Iwamoto, H. ; Tabata, M. ; Mochizuki, K. ; Thal, Eckhard ; Wheeler, N.
Author_Institution :
Div. of Power Device, Mitsubishi Electr. Corp., Japan
fYear :
2000
fDate :
2000
Firstpage :
256
Lastpage :
261
Abstract :
A new 1700 V IGBT is presented, with a PT structure formed by diffusing the collector and buffer layers into a homogeneous silicon wafer. This structure retains the superior Vce(sat)-switching loss trade-off of the PT IGBT, whilst achieving the greater short circuit ruggedness and easier parallel connection of NPT devices
Keywords :
insulated gate bipolar transistors; invertors; 1700 V; 690 V; AC industrial inverter applications; IGBT module; PT structure; Vce(sat)-switching loss trade-off; buffer layers; collector layers; homogeneous silicon wafer; parallel connection; punch through structure; short circuit ruggedness;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Power Electronics and Variable Speed Drives, 2000. Eighth International Conference on (IEE Conf. Publ. No. 475)
Conference_Location :
London
Print_ISBN :
0-85296-729-2
Type :
conf
DOI :
10.1049/cp:20000255
Filename :
888932
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2691741
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