Title :
A physical 3-D analytical model for the threshold voltage considering RDF
Author :
Panagopoulos, Georgios ; Roy, Kaushik
Author_Institution :
Sch. of ECE, Purdue Univ., West Lafayette, IN, USA
Abstract :
In the proposed approach the variations of threshold voltage and surface potential are modeled by considering a nonuniform doping profile of the channel region. We consider the contribution of all the dopants to the surface potential. This is necessary because for small transistor dimensions, each discrete dopant contributes significantly towards device performance parameters.
Keywords :
integrated circuit modelling; Monte Carlo; channel region; physical 3D analytical model; threshold voltage; Analytical models; Circuit optimization; Circuit simulation; Computational modeling; Electrons; Fluctuations; Random variables; Resource description framework; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354849
