Title :
Insights and optimizations of tunnel field-effect transistor operation
Author :
Yu, Hyung Suk ; Chui, Chi On
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
Abstract :
By incorporating the realistic junction parameters, we have obtained new insights on practical TFET operation. Interestingly, we have found that a non-abrupt junction does not necessarily degrade the TFET performance if the geometry can be appropriately optimized. We have also studied the tradeoffs in using a Si-Ge-Si channel.
Keywords :
field effect transistors; optimisation; silicon compounds; tunnel transistors; Si-Ge-Si; Si-Ge-Si channel; TFET performance; nonabrupt junction; optimizations; realistic junction parameters; tunnel field-effect transistor operation; Degradation; Doping; FETs; Geometry; Guidelines; Linear discriminant analysis; Medical simulation; Tunneling; Variable structure systems; Voltage;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354853
