• DocumentCode
    2691971
  • Title

    Insights and optimizations of tunnel field-effect transistor operation

  • Author

    Yu, Hyung Suk ; Chui, Chi On

  • Author_Institution
    Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    87
  • Lastpage
    88
  • Abstract
    By incorporating the realistic junction parameters, we have obtained new insights on practical TFET operation. Interestingly, we have found that a non-abrupt junction does not necessarily degrade the TFET performance if the geometry can be appropriately optimized. We have also studied the tradeoffs in using a Si-Ge-Si channel.
  • Keywords
    field effect transistors; optimisation; silicon compounds; tunnel transistors; Si-Ge-Si; Si-Ge-Si channel; TFET performance; nonabrupt junction; optimizations; realistic junction parameters; tunnel field-effect transistor operation; Degradation; Doping; FETs; Geometry; Guidelines; Linear discriminant analysis; Medical simulation; Tunneling; Variable structure systems; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354853
  • Filename
    5354853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2691971