• DocumentCode
    2692042
  • Title

    High-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs

  • Author

    Moon, Seong Min ; Chae, Seung Wan ; Kwak, Joon Seop

  • Author_Institution
    Dept. of Mater. Sci. & Metall. Eng., Sunchon Nat. Univ., Chonnam, South Korea
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    95
  • Lastpage
    96
  • Abstract
    In this study, we have investigated the high-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs. For this purpose, we fabricated large size blue InGaN/GaN LED chips (1mm×1mm) by using standard LED fabrication processes, where the ITO and Cr/Au served as p-type ohmic contact and n-ohmic contact layer, respectively.
  • Keywords
    III-V semiconductors; ageing; gallium compounds; indium compounds; light emitting diodes; ohmic contacts; reliability; wide band gap semiconductors; InGaN; electrical stress; electro-optical degradation; light emitting diodes; ohmic contacts; thermal stress; Aging; Current measurement; Electrical resistance measurement; Gallium nitride; Leakage current; Light emitting diodes; Power measurement; Temperature; Thermal degradation; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354857
  • Filename
    5354857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2692042