Title :
A Low Noise Distributed Amplifier with Gain Control
Author :
Hutchinson, C. ; Kennan, W.
fDate :
May 9 1975-June 11 1987
Abstract :
A 2 to 18 GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, Iess than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.
Keywords :
Bandwidth; Contracts; Distributed amplifiers; FETs; Gain control; Gallium arsenide; Impedance; MMICs; Noise figure; Transmission lines;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132352
