DocumentCode
2692090
Title
A Low Noise Distributed Amplifier with Gain Control
Author
Hutchinson, C. ; Kennan, W.
Volume
1
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
165
Lastpage
168
Abstract
A 2 to 18 GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, Iess than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.
Keywords
Bandwidth; Contracts; Distributed amplifiers; FETs; Gain control; Gallium arsenide; Impedance; MMICs; Noise figure; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132352
Filename
1132352
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