In-depth analysis of 3D Silicon nanowire SONOS memory characteristics by TCAD simulations

Author

Nowak, E. ; Hubert, A. ; Perniola, L. ; Ernst, T. ; Ghibaudo, G. ; Reimbold, G. ; De Salvo, B. ; Boulanger, F.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2010

fDate

16-19 May 2010

Firstpage

1

Lastpage

4

Abstract

In this work, we present a detailed investigation of the electrical characteristics of 3D Gate-All-Around (GAA) Silicon nanowire (down to 6nm-diameter) SONOS memories compared to standard planar SONOS devices. In particular, by means of TCAD simulations, the write, erase and retention characteristics under uniform FN stress are explained and the main geometrical and electrostatic effects of 3D cylindrical devices are put in evidence. The physical mechanisms dominating the 3D devices performance and reliability are identified. In particular, the great influence of band-to-band phenomenon in the erase characteristics is underlined.

Keywords

elemental semiconductors; nanowires; semiconductor storage; silicon; technology CAD (electronics); 3D cylindrical devices; 3D gate-all-around nanowire; 3D nanowire SONOS memory; Si; TCAD; band-to-band phenomenon; electrostatic effects; Analytical models; Electric variables; Electrostatics; Etching; Fabrication; Germanium silicon alloys; Nanoscale devices; Plasma chemistry; SONOS devices; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2010 IEEE International

Conference_Location

Seoul

Print_ISBN

978-1-4244-6719-8

Electronic_ISBN

978-1-4244-7668-8

Type

conf

DOI

10.1109/IMW.2010.5488387

Filename

5488387