Title :
Investigation of scattering mechanisms in HfO2 gated Hall structures with In0.77Ga0.23As quantum well channel
Author :
Oktyabrsky, S. ; Nagaiah, P. ; Tokranov, V. ; Kambhampati, R. ; Yakimov, M. ; Tsai, W. ; Koveshnikov, S.
Author_Institution :
Univ. at Albany - SUNY, Albany, NY, USA
Abstract :
In this work we investigate the major scattering mechanisms leading to degradation of mobility in HfO2-gated, modulation doped, strained In0.53Ga0.47As/In0.77Ga0.23As QW structures were grown by molecular beam epitaxy on semi-insulating InP substrates. By varying In0.53Ga0.47As/InAlAs barrier and HfO2 thickness along with controlling interface state density and using temperature dependent Hall mobility measurements we have de-convoluted the contribution of various scattering mechanisms to channel mobility degradation.
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; dielectric materials; gallium arsenide; hafnium compounds; indium compounds; interface states; molecular beam epitaxial growth; semiconductor quantum wells; semiconductor-insulator boundaries; HfO2-In0.53Ga0.47As-In0.77Ga0.23As-InP; In0.53Ga0.47As-InAlAs-HfO2; channel mobility degradation; high-k oxide gated Hall structures; high-k oxide-gated quantum well structure; interface state density; modulation doped quantum well structure; molecular beam epitaxy; phonon scattering; quantum well channel; scattering mechanisms; semiinsulating InP substrates; strained quantum well structure; temperature dependent Hall mobility; Degradation; Epitaxial layers; Hafnium oxide; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Scattering; Substrates; Temperature control; Thickness control;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354868
