Achieving nearly free fermi-level movement and Vth engineering in Ga2O3(Gd2O3)/In0.2Ga0.8As

Author

Lin, T.D. ; Wu, Y.D. ; Chang, Y.C. ; Chiang, T.H. ; Chuang, C.Y. ; Lin, C.A. ; Chang, W.H. ; Chiu, H.C. ; Tsai, W. ; Kwo, J. ; Hong, M.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2009

fDate

22-24 June 2009

Firstpage

127

Lastpage

128

Abstract

In this work, we report a systematic study on n- and p-type Al₂O3/Ga2O3(Gd₂O3) [GGO]/In0.2Ga_0.8As/GaAs MOS capacitors (MOSCAPs) using metal gates Al, TiN, and Ni of work functions of 4.1, 4.8, and 5.2 V, respectively. We demonstrated for the first time nearly ideal characteristics of the In_0.2Ga_0.8As based MOSCAPs, and remarkably well-controlled V_th. The GGO/In_0.2Ga_0.8As with a perfected interface, negligible bulk traps, and high temperature thermal stability allows the meaningful studies of the n and p-MOSCAPs using metal gates with different work functions. These devices exhibited extremely low leakage current densities, symmetrical C-V characteristics with negligible frequency dispersion, low D_it, and gate-bias-modulated Fermi-level with a high efficiency over 80% near the midgap.

Keywords

CMOS integrated circuits; Fermi level; III-V semiconductors; MOS capacitors; MOSFET; gallium compounds; indium compounds; thermal stability; work function; CMOS technology; Ga₂O₃(Gd₂O₃)-In_0.2Ga_0.8As; III-V MOSFETs; MOS capacitors; free fermi-level; high-k/metal gates; leakage current; thermal stability; work functions; Aluminum oxide; CMOS technology; Capacitance-voltage characteristics; Frequency; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; MOS capacitors; MOSFETs; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354873

Filename

5354873