Title :
Achieving nearly free fermi-level movement and Vth engineering in Ga2O3(Gd2O3)/In0.2Ga0.8As
Author :
Lin, T.D. ; Wu, Y.D. ; Chang, Y.C. ; Chiang, T.H. ; Chuang, C.Y. ; Lin, C.A. ; Chang, W.H. ; Chiu, H.C. ; Tsai, W. ; Kwo, J. ; Hong, M.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
In this work, we report a systematic study on n- and p-type Al2O3/Ga2O3(Gd2O3) [GGO]/In0.2Ga0.8As/GaAs MOS capacitors (MOSCAPs) using metal gates Al, TiN, and Ni of work functions of 4.1, 4.8, and 5.2 V, respectively. We demonstrated for the first time nearly ideal characteristics of the In0.2Ga0.8As based MOSCAPs, and remarkably well-controlled Vth. The GGO/In0.2Ga0.8As with a perfected interface, negligible bulk traps, and high temperature thermal stability allows the meaningful studies of the n and p-MOSCAPs using metal gates with different work functions. These devices exhibited extremely low leakage current densities, symmetrical C-V characteristics with negligible frequency dispersion, low Dit, and gate-bias-modulated Fermi-level with a high efficiency over 80% near the midgap.
Keywords :
CMOS integrated circuits; Fermi level; III-V semiconductors; MOS capacitors; MOSFET; gallium compounds; indium compounds; thermal stability; work function; CMOS technology; Ga2O3(Gd2O3)-In0.2Ga0.8As; III-V MOSFETs; MOS capacitors; free fermi-level; high-k/metal gates; leakage current; thermal stability; work functions; Aluminum oxide; CMOS technology; Capacitance-voltage characteristics; Frequency; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; MOS capacitors; MOSFETs; Tin;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354873
