Title :
High mobility ambipolar field effect transistors made from large-scale CVD graphitic thin films
Author :
Cao, Helin ; Yu, Qingkai ; Childres, Isaac ; Pei, Steven S. ; Chen, Yong P.
Author_Institution :
Dept. of Phys., Purdue Univ., West Lafayette, IN, USA
Abstract :
Ultrathin graphitic films containing only one or a few graphene layers have received great attention as a promising channel material to make "carbon-based" transistors, particularly for high speed and/or low power electronic devices. Back-gated or front-gated graphene field effect transistors (GFET) made from exfoliated (from bulk graphite) or epitaxially-grown (by surface decomposition of SiC) graphene layers can show electron and hole mobilities approaching 104 cm2/Vs or higher.
Keywords :
chemical vapour deposition; electron mobility; field effect transistors; hole mobility; thin films; back-gated graphene field effect transistor; carbon-based transistor; electron mobility; front-gated graphene field effect transistor; high mobility ambipolar field effect transistor; hole mobility; large-scale CVD graphitic thin film; ultrathin graphitic film; Electron optics; Etching; FETs; Large-scale systems; Nanotechnology; Optical films; Optical microscopy; Physics computing; Semiconductor films; Thin film transistors;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354876
