Title :
Amorphous silicon floating-gate thin film transistor
Author :
Huang, Yifei ; Hekmatshoar, Bahman ; Wagner, Sigurd ; Sturm, James C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
Abstract :
Amorphous silicon (a-Si) based memory devices have the potential to greatly expand the functionality of a-Si thin-film transistor (TFT) circuitry. Recently, an a-Si floating gate TFT (FGTFT) based memory element has been demonstrated, but th e memory window was on ly 0.5V an d the retention time was only ~1ho ur. Furthermore, a-Si FGTFTs in general have a threshold voltage which depends on th e drain voltage. In this work, we explore the effects of tunnel dielectric deposition condition and floating gate (FG) geometry on the performance of a-Si FGTFT. Through this analysis, we achieved a-Si FGTFTs with memory windows of >4V, room temperature retention times of >150hours and threshold voltages (V¿) which are independent of the drain voltage.
Keywords :
integrated memory circuits; silicon; thin film transistors; amorphous silicon based memory devices; amorphous silicon floating-gate thin film transistor; floating gate TFT; floating gate geometry; memory element; thin-film transistor circuitry; tunnel dielectric deposition; Amorphous silicon; Materials science and technology; Physics; Thin film transistors; USA Councils;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354877
