Title :
A novel fatigue-insensitive self-referenced scheme for 1T1C FRAM
Author :
Jia, Ze ; Zhang, Gong ; Zhang, Ming-Ming ; Ren, Tian-Ling ; Chen, Hong-Yi
Author_Institution :
Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
A novel self-referenced scheme without reference cell is proposed for 1T1C FRAM, which is a new solution to the access scheme for high density FRAM. It is insensitive and robust to fatigue of the FRAM cells and can overcome the challenges on reference signal design for 1T1C FRAM. Furthermore, the proposed scheme can decrease the power consumption and the die size of 1T1C FRAM, compared with conventional schemes.
Keywords :
ferroelectric storage; random-access storage; 1T1C FRAM; fatigue-insensitive self-referenced scheme; ferroelectric random access memory; Circuits; Energy consumption; Fatigue; Ferroelectric films; Inverters; Nonvolatile memory; Random access memory; Signal design; Timing; Voltage;
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
DOI :
10.1109/IMW.2010.5488402
