DocumentCode
2692412
Title
MOS devices
fYear
2009
fDate
22-24 June 2009
Firstpage
245
Lastpage
246
Keywords
Degradation; Electron mobility; Germanium; III-V semiconductor materials; Implants; MOS devices; MOSFETs; Niobium compounds; Semiconductor process modeling; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA, USA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354882
Filename
5354882
Link To Document