DocumentCode :
2692412
Title :
MOS devices
fYear :
2009
fDate :
22-24 June 2009
Firstpage :
245
Lastpage :
246
Keywords :
Degradation; Electron mobility; Germanium; III-V semiconductor materials; Implants; MOS devices; MOSFETs; Niobium compounds; Semiconductor process modeling; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA, USA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
Type :
conf
DOI :
10.1109/DRC.2009.5354882
Filename :
5354882
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2692412
