DocumentCode :
2692506
Title :
Novel 3-D stacked NAND flash string without body cross-talk effect
Author :
Jeong, Min-Kyu ; Lee, Joo-Wan ; Cho, Ilwhan ; Park, Byung-Gook ; Shin, Hyung-Cheol ; Lee, Jong-Ho
Author_Institution :
Sch. of EECS, Seoul Nat. Univ., Seoul, South Korea
fYear :
2010
fDate :
16-19 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
We have investigated ID-VGS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND flash memory.
Keywords :
NAND circuits; flash memories; NAND flash memory; NAND flash string; body cross-talk effect; common gate structure; shield layer; Character generation; Doping; Etching; Flash memory; Germanium silicon alloys; Immune system; Silicon germanium; Temperature; Thermal stresses; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2010 IEEE International
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-6719-8
Electronic_ISBN :
978-1-4244-7668-8
Type :
conf
DOI :
10.1109/IMW.2010.5488410
Filename :
5488410
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2692506
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