Lifetime and wearout current modeling of ultra-thin oxide antifuse bitcells using transient characterization

Author

Deloge, Matthieu ; Allard, Bruno ; Candelier, Philippe ; Damiens, Jöel ; Le-Roux, Elise ; Rafik, Mustapha

Author_Institution

STMicroelectronics, Crolles, France

fYear

2010

fDate

16-19 May 2010

Firstpage

1

Lastpage

4

Abstract

The lifetime modeling of antifuse bit cells is studied using transient measurements. Firstly, the wearout current is successfully modeled as Fowler-Nordheim. Secondly, the TDDB power-law voltage acceleration model is validated down to 30 0ns for a stress voltage of 5.5 V. Lifetime results are compared with the Multi-Vibrational Hydrogen Release Model.

Keywords

integrated circuit modelling; integrated circuit reliability; programmable circuits; random-access storage; transient analysis; Fowler-Nordheim model; TDDB power-law voltage acceleration model; life time modeling; multivibrational hydrogen release model; nonvolatile one time programmable antifuse memories; stress voltage; transient measurements; ultra-thin oxide antifuse bit cells; voltage 5.5 V; wearout current modeling; Acceleration; Breakdown voltage; Capacitors; Current measurement; Dielectrics; Electric breakdown; Electrical resistance measurement; Hydrogen; Reliability theory; Stress; Antifuse; Fowler-Nordheim; Hydrogen release; TDDB; breakdown; lifetime; memory; ultra-thin oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2010 IEEE International

Conference_Location

Seoul

Print_ISBN

978-1-4244-6719-8

Electronic_ISBN

978-1-4244-7668-8

Type

conf

DOI

10.1109/IMW.2010.5488412

Filename

5488412