DocumentCode
2692629
Title
Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics
Author
Shahrjerdi, D. ; Nah, J. ; Akyol, T. ; Ramon, M. ; Tutuc, E. ; Banerjee, S.K.
Author_Institution
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
73
Lastpage
74
Abstract
In summary, we have directly measured the inversion charge and mobility in enhancement-mode high-k GaAs FETs using Hall measurements. These results also show that despite the high density of traps, the mobility of electron carriers channel is relatively high.
Keywords
III-V semiconductors; electron mobility; field effect transistors; gallium arsenide; semiconductor device measurement; FET; Hall measurements; electron carriers channel; enhancement-mode field-effect transistors; high-k gate dielectrics; inversion charge; mobility measurements; Capacitance-voltage characteristics; Charge measurement; Current measurement; Dielectric measurements; Electrical resistance measurement; FETs; Gallium arsenide; III-V semiconductor materials; MOSFETs; Magnetic field measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354894
Filename
5354894
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