Title :
Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics
Author :
Shahrjerdi, D. ; Nah, J. ; Akyol, T. ; Ramon, M. ; Tutuc, E. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
In summary, we have directly measured the inversion charge and mobility in enhancement-mode high-k GaAs FETs using Hall measurements. These results also show that despite the high density of traps, the mobility of electron carriers channel is relatively high.
Keywords :
III-V semiconductors; electron mobility; field effect transistors; gallium arsenide; semiconductor device measurement; FET; Hall measurements; electron carriers channel; enhancement-mode field-effect transistors; high-k gate dielectrics; inversion charge; mobility measurements; Capacitance-voltage characteristics; Charge measurement; Current measurement; Dielectric measurements; Electrical resistance measurement; FETs; Gallium arsenide; III-V semiconductor materials; MOSFETs; Magnetic field measurement;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354894
