Atomistic deconstruction of clear performance advantages of a monolithically patterned wide-narrow-wide all-graphene FET

Summary form only given. Experiments show that wide GNRs are all metallic while ultra thin ribbons (<10 nm in width) are all semiconducting and the bandgap increases as the width get narrower. This leads us to design an all a graphene nanoribbon field effect transistor (GNRFET) and atomistically simulate its transport properties. We expect this system to benefit from the unique 2-D electrostatics of the source-drain regions and the covalent bonding at the contact-channel interfaces.