Title :
Absolute control of chirality unnecessary for wide-narrow-wide graphene field effect transistor
Author :
Tseng, F. ; Unluer, D. ; Stan, M. ; Ghosh, A.W.
Author_Institution :
Charles L. Brown ECE Dept., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
In contrast with carbon nanotubes, graphene nanoribbons (GNRs) suffer from edge roughness that dilutes its chirality dependence, creating a single inverse power law curve relating energy-bandgap and width. Thus all narrow nanoribbons (>10nm) are semiconducting while all wide nanoribbons are metallic. Our model which combines well-benchmarked semi-empirical Extended Huckel Theory (EHT)based electronic structure with an atomistic theory for quantum transport to illustrate this dilution of chirality dependence not-predicted by simplified tight-binding theory with ideal GNRs, but observed in experiments.
Keywords :
carbon nanotubes; chirality; field effect transistors; graphene; atomistic theory; carbon nanotubes; chirality absolute control; chirality dependence; edge roughness; electronic structure; energy bandgap; graphene nanoribbons; inverse power law curve; quantum transport; semi-empirical extended Huckel theory; tight-binding theory; wide-narrow-wide graphene field effect transistor; Carbon nanotubes; Energy measurement; FETs; Particle scattering; Photonic band gap; Physics; Predictive models; Quantum mechanics; Semiconductivity; Transconductance;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354896
