• DocumentCode
    2692676
  • Title

    Absolute control of chirality unnecessary for wide-narrow-wide graphene field effect transistor

  • Author

    Tseng, F. ; Unluer, D. ; Stan, M. ; Ghosh, A.W.

  • Author_Institution
    Charles L. Brown ECE Dept., Univ. of Virginia, Charlottesville, VA, USA
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    In contrast with carbon nanotubes, graphene nanoribbons (GNRs) suffer from edge roughness that dilutes its chirality dependence, creating a single inverse power law curve relating energy-bandgap and width. Thus all narrow nanoribbons (>10nm) are semiconducting while all wide nanoribbons are metallic. Our model which combines well-benchmarked semi-empirical Extended Huckel Theory (EHT)based electronic structure with an atomistic theory for quantum transport to illustrate this dilution of chirality dependence not-predicted by simplified tight-binding theory with ideal GNRs, but observed in experiments.
  • Keywords
    carbon nanotubes; chirality; field effect transistors; graphene; atomistic theory; carbon nanotubes; chirality absolute control; chirality dependence; edge roughness; electronic structure; energy bandgap; graphene nanoribbons; inverse power law curve; quantum transport; semi-empirical extended Huckel theory; tight-binding theory; wide-narrow-wide graphene field effect transistor; Carbon nanotubes; Energy measurement; FETs; Particle scattering; Photonic band gap; Physics; Predictive models; Quantum mechanics; Semiconductivity; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354896
  • Filename
    5354896