Reduction of hysteresis in mobility measurements of carbon nanotube transistors by pulsed I–V characterization

In this paper the effect of pulsed current-voltage (I_D-V_GS) measurements on the hysteretic behavior of carbon nanotube field-effect transistors (CNTFET) on SiO₂, and the subsequent mobility extraction is studied. It is found that hysteresis decreases with longer pulse delays and higher ambient temperature, and can be almost entirely eliminated at -10 s pulse intervals and -180 °C. Moreover, mobility curves extracted in such conditions approach a unified, "true" value for each nanotube, unlike the less reliable conventional methods which rely either on the forward or reverse voltage sweeps.