Electrical measurements of lateral spin transport in Si near a Si/SiO2 interface

In this paper we have realized true lateral spin transport in silicon using hot electron injection/detection techniques and demonstrated it with clear spin rotational signals in Hanle effect as well as spin valve measurements. Furthermore, we have investigated spin transport near the interface of silicon/silicon dioxide by applying a gate voltage. We observed broadening of the Hanle curve along with significant reduction of spin current polarization as electrons approach the interface.