Electrical measurements of lateral spin transport in Si near a Si/SiO2 interface

Author

Jang, Hyuk-Jae ; Huang, Biqin ; Appelbaum, Ian

Author_Institution

Dept. of Phys., Univ. of Maryland, College Park, MD, USA

fYear

2009

fDate

22-24 June 2009

Firstpage

35

Lastpage

36

Abstract

In this paper we have realized true lateral spin transport in silicon using hot electron injection/detection techniques and demonstrated it with clear spin rotational signals in Hanle effect as well as spin valve measurements. Furthermore, we have investigated spin transport near the interface of silicon/silicon dioxide by applying a gate voltage. We observed broadening of the Hanle curve along with significant reduction of spin current polarization as electrons approach the interface.

Keywords

Hanle effect; elemental semiconductors; hot carriers; semiconductor-insulator boundaries; silicon; silicon compounds; Hanle effect; Si-SiO₂; gate voltage; hot electron injection-detection techniques; lateral spin transport; spin current polarization; spin rotational signals; spin valve measurements; Current measurement; Detectors; Electric variables measurement; Electrons; Geometry; Magnetic field measurement; Physics; Rotation measurement; Silicon; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354907

Filename

5354907