Title :
Bias and gate control of graphene spin valves
Author :
Han, Wei ; Wang, W.H. ; Pi, K. ; McCreary, K.M. ; Bao, W. ; Li, Yan ; Lau, C.N. ; Kawakami, R.K.
Author_Institution :
Dept. of Phys. & Astron., Univ. of California, Riverside, CA, USA
Abstract :
In this paper we are fabricating and utilizing the bias current and gate voltage to control the room temperature (RT) single layer graphene (SLG) spin valves. The SLG spin valves are fabricated by electron-beam lithography with transparent SLG/Co contact junctions. The properties of SLG spin valves: non-local MR depending on the gate voltage, robustness on the electron side and variation on the hole side as a function of bias, make the graphene spin valves as one of the most promising RT multifunctional spintronic devices for the future.
Keywords :
cobalt; electron beam lithography; graphene; interface magnetism; magnetoelectronics; magnetoresistance; spin valves; C-Co; bias current control; contact junction; electron-beam lithography; gate voltage control; magnetoresistance; multifunctional spintronic device; robustness; room temperature single layer graphene; spin valve; temperature 293 K to 298 K; Astronomy; Charge carrier processes; Conductivity; Electrodes; Lithography; Magnetoresistance; Physics; Spin valves; Temperature control; Voltage control;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354909
