Title :
New universal physical model for the recoverable part of NBTI degradation
Author :
Zhang, Xiao ; Deal, Michael ; Nishi, Yoshio
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
In this study, we propose a new universal electron trapping/detrapping model of interface traps for the recoverable part of negative bias temperature instability (NBTI) using dispersive relaxation time. In particular, our model can separate different phases of NBTI process by different slopes of logarithmic time dependence for the first time. We have also successfully derived a normalized universal relaxation relation of this part of NBTI.
Keywords :
carrier relaxation time; electron traps; interface states; NBTI degradation; dispersive relaxation time; electron trapping-detrapping model; interface traps; logarithmic time dependence; negative bias temperature instability; Degradation; Dispersion; Electron traps; Energy states; Function approximation; Niobium compounds; Phase measurement; Stress measurement; Thermal stresses; Titanium compounds;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354919
