• DocumentCode
    2693048
  • Title

    VLS-grown silicon nanowire tunnel FET

  • Author

    Moselund, K.E. ; Ghoneim, H. ; Björk, M.T. ; Schmid, H. ; Karg, S. ; Lörtscher, E. ; Riess, W. ; Riel, H.

  • Author_Institution
    IBM Res. GmbH, Zurich Res. Lab., Ruschlikon, Switzerland
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    In the present work we demonstrate the successful implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (Si NWs) that were grown using the vapor-liquid-solid (VLS) growth method. Device optimization resulted in increased band-to-band tunneling with an on-current of 0.5 ¿A/¿m, and Ion/Ioff ratio of about 6 decades combined with an inverse subthreshold slope (SS) of around 100 mV/dec over several decades of current and even sub-60 mV/dec for the lowest currents.
  • Keywords
    elemental semiconductors; field effect transistors; nanowires; silicon; tunnel transistors; Si; band-to-band tunneling; inverse subthreshold slope; nanowire tunnel FET; tunneling field-effect transistors; vapor-liquid-solid growth method; Diodes; Doping; FETs; Geometry; Laboratories; MOSFET circuits; Silicon; Temperature; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354920
  • Filename
    5354920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693048