• DocumentCode
    2693147
  • Title

    Potential and challenges of InN and related alloys for advanced electronic devices

  • Author

    Nanishi, Yasushi ; Maeda, Narihiko ; Yamaguchi, Tomohiro ; Kaneko, Makoto

  • Author_Institution
    Ritsumeikan Univ., Kusatsu, Japan
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    In this talk, we will introduce newly developed RF-MBE growth method which made it possible to grow high-quality InN very reproducibly. Then, the results on studies on ohmic and MIS c ontacts to InN will be shown. InN re-growth technology applied to AlGaN/GaN HFET will also be introduced and show possibility to make new type of fun ctional device using large band offset between InN and other nitride semiconductor system.
  • Keywords
    indium compounds; semiconductor growth; semiconductor materials; InN; RF-MBE growth method; advanced electronic devices; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354927
  • Filename
    5354927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693147