DocumentCode
2693180
Title
High voltage lateral 4H-SiC JFETs on a semi-insulating substrate
Author
Huang, Chih-Fang ; Kan, Cheng-Li ; Wu, Tian-Li ; Lee, Meng-Chia ; Liu, Yo-Zthu ; Lee, Kung-Yen ; Zhao, Feng
Author_Institution
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2009
fDate
22-24 June 2009
Firstpage
275
Lastpage
276
Abstract
Because of the superior material properties, silicon carbide (SiC) devices have drawn considerable attention in high power and high temperature applications. Promising performance has been demonstrated on both vertical and lateral devices. In this paper, we report the performance of high voltage lateral 4H-SiC JFETs built on a semiinsulating substrate. The drift region design is based on charge compensation of the n- and p-type materials.
Keywords
junction gate field effect transistors; substrates; high power application; high temperature application; high voltage lateral 4H-SiC JFET; n-type materials; p-type materials; semiinsulating substrate; silicon carbide devices; Aluminum; Doping; Implants; Insulation; JFETs; Material properties; Nitrogen; Silicon carbide; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354929
Filename
5354929
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