DocumentCode
2693203
Title
Characterization and modeling of low frequency noise in single-walled carbon nanotube film-based devices
Author
Behnam, Ashkan ; Bosman, Gijs ; Ural, Ant
Author_Institution
Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
25
Lastpage
26
Abstract
Summary form only given. Single-walled carbon nanotube (CNT) films are a new class of transparent, conductive, and flexible materials, and they exhibit uniform physical and electronic properties. Several promising device applications of CNT films have recently been demonstrated, such as thin film transistors, optoelectronic devices, and chemical sensors. For many of these applications, intrinsic noise level and its scaling with device parameters is undoubtedly one of the most important figures of merit; hence they are the focus of this study.
Keywords
carbon nanotubes; semiconductor device noise; device parameters; electronic property; intrinsic noise level; low frequency noise; physical property; single-walled carbon nanotube film-based devices; single-walled carbon nanotube films; Carbon nanotubes; Low-frequency noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354931
Filename
5354931
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