• DocumentCode
    2693203
  • Title

    Characterization and modeling of low frequency noise in single-walled carbon nanotube film-based devices

  • Author

    Behnam, Ashkan ; Bosman, Gijs ; Ural, Ant

  • Author_Institution
    Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    25
  • Lastpage
    26
  • Abstract
    Summary form only given. Single-walled carbon nanotube (CNT) films are a new class of transparent, conductive, and flexible materials, and they exhibit uniform physical and electronic properties. Several promising device applications of CNT films have recently been demonstrated, such as thin film transistors, optoelectronic devices, and chemical sensors. For many of these applications, intrinsic noise level and its scaling with device parameters is undoubtedly one of the most important figures of merit; hence they are the focus of this study.
  • Keywords
    carbon nanotubes; semiconductor device noise; device parameters; electronic property; intrinsic noise level; low frequency noise; physical property; single-walled carbon nanotube film-based devices; single-walled carbon nanotube films; Carbon nanotubes; Low-frequency noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354931
  • Filename
    5354931