DocumentCode :
2693203
Title :
Characterization and modeling of low frequency noise in single-walled carbon nanotube film-based devices
Author :
Behnam, Ashkan ; Bosman, Gijs ; Ural, Ant
Author_Institution :
Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
fYear :
2009
fDate :
22-24 June 2009
Firstpage :
25
Lastpage :
26
Abstract :
Summary form only given. Single-walled carbon nanotube (CNT) films are a new class of transparent, conductive, and flexible materials, and they exhibit uniform physical and electronic properties. Several promising device applications of CNT films have recently been demonstrated, such as thin film transistors, optoelectronic devices, and chemical sensors. For many of these applications, intrinsic noise level and its scaling with device parameters is undoubtedly one of the most important figures of merit; hence they are the focus of this study.
Keywords :
carbon nanotubes; semiconductor device noise; device parameters; electronic property; intrinsic noise level; low frequency noise; physical property; single-walled carbon nanotube film-based devices; single-walled carbon nanotube films; Carbon nanotubes; Low-frequency noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
Type :
conf
DOI :
10.1109/DRC.2009.5354931
Filename :
5354931
Link To Document :
بازگشت