• DocumentCode
    2693210
  • Title

    Radiation hardness assessment of high voltage 4H-SiC BJTs

  • Author

    Nawaz, M. ; Zaring, C. ; Onoda, S. ; Ohshima, T. ; Östling, M.

  • Author_Institution
    TranSiC AB, Kista, Sweden
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    279
  • Lastpage
    280
  • Abstract
    SiC based BJTs have been irradiated with protons and 13C ions and show fairly stable electrical behavior with proton fluence up to 5×1010 p/cm-2. Recent studies on SiC JFETs and Schottky diodes with gamma rays (60Co) and protons reported no degradation from gamma rays up to a dose of ~6 Mrad but high energy protons (63 MeV) at the fluence of 5×1015 p/cm2 induced an 80% reduction in saturated drain current. This work demonstrates for the first time the suitability of SiC-BJTs when irradiated with gamma rays.
  • Keywords
    Schottky diodes; bipolar transistors; gamma-ray effects; junction gate field effect transistors; radiation hardening (electronics); silicon compounds; SiC; bipolar junction transistors; gamma ray irradation; radiation hardness assessment; saturated drain current; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354932
  • Filename
    5354932
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693210