Title :
Radiation hardness assessment of high voltage 4H-SiC BJTs
Author :
Nawaz, M. ; Zaring, C. ; Onoda, S. ; Ohshima, T. ; Östling, M.
Author_Institution :
TranSiC AB, Kista, Sweden
Abstract :
SiC based BJTs have been irradiated with protons and 13C ions and show fairly stable electrical behavior with proton fluence up to 5×1010 p/cm-2. Recent studies on SiC JFETs and Schottky diodes with gamma rays (60Co) and protons reported no degradation from gamma rays up to a dose of ~6 Mrad but high energy protons (63 MeV) at the fluence of 5×1015 p/cm2 induced an 80% reduction in saturated drain current. This work demonstrates for the first time the suitability of SiC-BJTs when irradiated with gamma rays.
Keywords :
Schottky diodes; bipolar transistors; gamma-ray effects; junction gate field effect transistors; radiation hardening (electronics); silicon compounds; SiC; bipolar junction transistors; gamma ray irradation; radiation hardness assessment; saturated drain current; Voltage;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354932
