Title :
Microwave ZnO thin film transistors on Si substrates
Author :
Bayraktaroglu, Burhan ; Leedy, Kevin ; Neidhard, Robert
Author_Institution :
Air Force Res. Lab., Sensors Directorate, AFRL/RYD, Wright Patterson AFB, OH, USA
Abstract :
The performance of flat panel display electronic circuits is mostly limited by the availability of stable thin film transistors (TFT) with high speed capabilities. The most commonly used technologies for this application based on amorphous Si and organic semiconductor films have severe speed limitations due to low mobility associated with such films. As the demand for higher speed electronics increase with display size and complexity, alternative technologies are being developed based on heavy metal oxide compounds such as ZnO, which have higher performance and better robustness to environmental conditions.
Keywords :
II-VI semiconductors; elemental semiconductors; microwave measurement; microwave transistors; silicon; thin film transistors; zinc compounds; Si; ZnO; microwave thin film transistors; Amorphous materials; Availability; Electronic circuits; Flat panel displays; Organic semiconductors; Robustness; Semiconductor films; Substrates; Thin film transistors; Zinc oxide;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354937