• DocumentCode
    2693290
  • Title

    Microwave ZnO thin film transistors on Si substrates

  • Author

    Bayraktaroglu, Burhan ; Leedy, Kevin ; Neidhard, Robert

  • Author_Institution
    Air Force Res. Lab., Sensors Directorate, AFRL/RYD, Wright Patterson AFB, OH, USA
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    175
  • Lastpage
    176
  • Abstract
    The performance of flat panel display electronic circuits is mostly limited by the availability of stable thin film transistors (TFT) with high speed capabilities. The most commonly used technologies for this application based on amorphous Si and organic semiconductor films have severe speed limitations due to low mobility associated with such films. As the demand for higher speed electronics increase with display size and complexity, alternative technologies are being developed based on heavy metal oxide compounds such as ZnO, which have higher performance and better robustness to environmental conditions.
  • Keywords
    II-VI semiconductors; elemental semiconductors; microwave measurement; microwave transistors; silicon; thin film transistors; zinc compounds; Si; ZnO; microwave thin film transistors; Amorphous materials; Availability; Electronic circuits; Flat panel displays; Organic semiconductors; Robustness; Semiconductor films; Substrates; Thin film transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354937
  • Filename
    5354937