DocumentCode
2693290
Title
Microwave ZnO thin film transistors on Si substrates
Author
Bayraktaroglu, Burhan ; Leedy, Kevin ; Neidhard, Robert
Author_Institution
Air Force Res. Lab., Sensors Directorate, AFRL/RYD, Wright Patterson AFB, OH, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
175
Lastpage
176
Abstract
The performance of flat panel display electronic circuits is mostly limited by the availability of stable thin film transistors (TFT) with high speed capabilities. The most commonly used technologies for this application based on amorphous Si and organic semiconductor films have severe speed limitations due to low mobility associated with such films. As the demand for higher speed electronics increase with display size and complexity, alternative technologies are being developed based on heavy metal oxide compounds such as ZnO, which have higher performance and better robustness to environmental conditions.
Keywords
II-VI semiconductors; elemental semiconductors; microwave measurement; microwave transistors; silicon; thin film transistors; zinc compounds; Si; ZnO; microwave thin film transistors; Amorphous materials; Availability; Electronic circuits; Flat panel displays; Organic semiconductors; Robustness; Semiconductor films; Substrates; Thin film transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354937
Filename
5354937
Link To Document