Flexible plastic substrate ZnO thin film transistor circuits

Author

Zhao, Dalong A. ; Mourey, Devin A. ; Jackson, Thomas N.

Author_Institution

Center for Thin Film Devices & Mater. Res. Inst., PA, USA

fYear

2009

fDate

22-24 June 2009

Firstpage

177

Lastpage

178

Abstract

Oxide semiconductor-based thin film transistors (TFTs) have potential as higher performance and improved stability replacements for amorphous silicon TFTs in displays and other large-area electronics. ZnO TFTs fabricated by pulsed laser deposition (PLD) at 400^Â¿C on GaAs substrates have demonstrated mobility over 100 cm2/V-s, and five-stage ring oscillators based on 0.5 Â¿m gate length indium gallium-zinc-oxide (IGZO) TFTs fabricated on silicon substrates have demonstrated propagation delay below 1 ns/stage for bootstrapped ring oscillators.

Keywords

gallium compounds; indium compounds; oscillators; pulsed laser deposition; thin film transistors; zinc compounds; GaAs; InGaZnO; ZnO; amorphous silicon TFT; bootstrapped ring oscillators; five-stage ring oscillators; flexible plastic substrate thin film transistor circuits; propagation delay; pulsed laser deposition; size 0.5 mum; temperature 400 degC; Amorphous silicon; Circuit stability; Displays; Flexible printed circuits; Plastics; Pulsed laser deposition; Ring oscillators; Substrates; Thin film transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354938

Filename

5354938