Title :
Complementary thin film electronics based on ZnO/ZnTe
Author :
Bowen, W.E. ; Wang, W. ; Phillips, J.D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Thin film transistors for large-area and/or flexible electronics desire materials with the maximum carrier mobility while maintaining a reasonable deposition temperature. Semiconducting oxides including polycrystalline ZnO and amorphous IGZO have emerged as important candidates for thin film transistors due to their relatively high carrier mobility (~10cm2/Vs) in comparison to amorphous silicon and organic thin films. Digital logic and related electronic circuitry based on semiconducting oxides would benefit tremendously from a complementary device technology. However, these materials are all intrinsically n-type and have not demonstrated a reliable means for obtaining p-type thin films. Alternatively, polycrystalline ZnTe thin films are intrinsically p-type and exhibit relatively high hole mobility (~5cm2/Vs) at low deposition temperatures (<300°C). In this work, ZnO and ZnTe thin film transistors (TFTs) and associated complementary logic inverters are demonstrated.
Keywords :
carrier mobility; flexible electronics; thin film transistors; zinc compounds; ZnO; ZnO thin film transistor; ZnTe; ZnTe thin film transistor; amorphous IGZO; associated complementary logic inverters; carrier mobility; complementary device technology; complementary thin film electronics; digital logic; flexible electronics; p-type thin films; polycrystalline ZnO; polycrystalline ZnTe thin films; semiconducting oxides; Amorphous materials; Flexible electronics; Semiconductivity; Semiconductor materials; Semiconductor thin films; Temperature; Thin film circuits; Thin film transistors; Zinc compounds; Zinc oxide;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354941